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MOF film growth assisted by atomic layer deposition of oxide nanomembrane: from principles to applications
WANG Yi, SU Xiaran, ZHAO Zhe, YOU Jiayang, ZHANG Zhiqun, MEI Yu, JIANG Hanwen, CHEN Yu'an, CUI Xugao, MEI Yongfeng, HUANG Gaoshan
2026, 32(4): 041101. DOI: 10.3724/jfmd.2601016
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Research status and future prospects of hafnium oxide-based ferroelectric field-effect transistors
ZHOU Junliang, LI Jianguo, HUO Yuetong, YAN Wenchao, WENG Zeping, QI Jiabin, ZHAO Yi
2026, 32(4): 042102. DOI: 10.3724/jfmd.2602026
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Research progresses of data retention in hafnium-based ferroelectric memory devices
LIN Yunxue, CHEN Lijian, QI Jiabin, WENG Zeping, QU Yiming
2026, 32(4): 042103. DOI: 10.3724/jfmd.2509071
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Progresses on preparation, microstructure tailoring, and applications of two-dimensional silicon nanosheets
PENG Bangguo, ZHOU Wei, ZHANG Jianfang, YU Cuiping, CAI Rui, WANG Yan, WU Yucheng
2026, 32(4): 041104. DOI: 10.3724/jfmd.2512103
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Research progress of superelastic materials
JIA Linkun, ZENG Zhehui, XIA Anyi, XUE Yuhang, YANG Guiqin
2026, 32(4): 041105. DOI: 10.3724/jfmd.2602028
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Quantitative vector magnetic field imaging of zigzag graphene nanoribbons embedded in hexagonal boron nitride
LIU Chenxi, FENG Yu, KONG Ziqiang, LIU Jiawen, ZHANG Ziceng, SONG Junchi, GUO Maosen, TONG Aomei, JIANG Chengxin, WANG Haomin
2026, 32(4): 043206. DOI: 10.3724/jfmd.2511094
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Electrical performance modulation of WSe2 transistors by ultraviolet-ozone treatment
FU Sibo, ZHAO Xiaotong, GENG Xiangshun, GUAN Yuanyuan, YANG Yi, LEI Ming, REN Tianling
2026, 32(4): 042207. DOI: 10.3724/jfmd.2601001
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Research on the co-design technology of layout-level drift region scaling and segmented field plate engineering for LDMOS
ZHAO Guohao, ZHAO Yi, CAI Daolin
2026, 32(4): 042108. DOI: 10.3724/jfmd.2509068
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Effects of ferroelectric composition, dielectric layer material, and channel length on the properties of MFIS NCFETs
CHEN Guannan, SHAO Yong, LI Qiqing, ZHU Minmin
2026, 32(4): 042209. DOI: 10.3724/jfmd.2512102
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Effect of Al2O3 interlayer on ferroelectric properties of Hf0.5Zr0.5O2 thin film capacitors
LAI Songtao, LAI Yunfeng
2026, 32(4): 042210. DOI: 10.3724/jfmd.2601009
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Unveiling the role of defect clusters in neuromorphic systems for ferroelectric thin films: a phase-field study
LI Li, ZHU Minmin, WANG Chenxi
2026, 32(4): 042211. DOI: 10.3724/jfmd.2601003
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Preparation of kapok-derived carbon fiber and its microwave absorption performance
DENG Han, LI Guang
2026, 32(4): 041212. DOI: 10.3724/jfmd.2512097
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