CHEN Ji-an, MAO Xin-hui, ZHAO Xiao-yu, DING Wen, CAO Ying, ZHOU Yong. Stress-impedance effects of FeSiB/Cu/FeSiB trilayers with a meander structureJ. Journal of Functional Materials and Devices, 2005, 11(4): 419-422.
Citation: CHEN Ji-an, MAO Xin-hui, ZHAO Xiao-yu, DING Wen, CAO Ying, ZHOU Yong. Stress-impedance effects of FeSiB/Cu/FeSiB trilayers with a meander structureJ. Journal of Functional Materials and Devices, 2005, 11(4): 419-422.

Stress-impedance effects of FeSiB/Cu/FeSiB trilayers with a meander structure

  • FeSiB/Cu/FeSiB trilayers with a meander structure were fabricated by magnetron sputtering on thin glass substrate, and the stress-impedance(SI) effects were studied in the frequency range of 1-40MHz for different film thicknesses of FeSiB films and Cu layer. Experimental results show that the values of stress-impedance(SI) ratio increase nearly linearly with the deflection of the FeSiB/Cu/FeSiB trilayers at high frequencies, and a large negative SI ratio of-18.3% is obtained at 25MHz with 1mm deflection in the FeSiB/Cu/FeSiB trilayers with a thicker FeSiB film. It′s attractive for the applications in stress sensors.
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