Characteristics of the element with giant magneto-resistance based on the amorphous film

The spin valve structure magnetic multilayer arrays of CoNbZr/Co/Cu/Co and NiFe/Co/Cu/Co were fabricated by lift-off technology.The static GMR and dynamics GMR behaviors were measured.The results show that CoNbZr layer has good linear response to the rapid changes of magnetic field.The CoNbZr/Co/Cu/Co spin valve element shows good GMR characteristics compared with the NiFe/Co/Cu/Co spin valve element.The CoNbZr/Co/Cu/Co spin-valve element can be applied to spin-electronic devices including magnetic random access memory.