YAN Hui-fang, ZHAO Qing-xun, FU Yue-ju, LIU Zhuo-jia, ZHANG Ting, GUO Jian-xin, REN Guo-qiang, LIU Bao-ting. Microstructure and Properties of P(VDF-TrFE) ferroelectric capacitor Using Ni-Al as the bottom electrodeJ. Journal of Functional Materials and Devices, 2012, 18(1): 82-86.
Citation: YAN Hui-fang, ZHAO Qing-xun, FU Yue-ju, LIU Zhuo-jia, ZHANG Ting, GUO Jian-xin, REN Guo-qiang, LIU Bao-ting. Microstructure and Properties of P(VDF-TrFE) ferroelectric capacitor Using Ni-Al as the bottom electrodeJ. Journal of Functional Materials and Devices, 2012, 18(1): 82-86.

Microstructure and Properties of P(VDF-TrFE) ferroelectric capacitor Using Ni-Al as the bottom electrode

  • Pt/P(VDF-TrFE)/Ni-Al heterostructure capacitors have been fabricated first on SiO2/Si(001) substrate,in which P(VDF-TrFE) copolymer ferroelectric film was prepared by sol-gel method and Ni-Al and Pt films were prepared by magnetron sputtering.X-ray analysis indicated that Ni-Al film is amorphous,while P(VDF-TrFE) film is crystallined.It is found that Pt/P(VDF-TrFE)/Ni-Al capacitor possesses well saturated loops,the remnant polarization and coercive voltage are7.6 μC/cm2 and 45.7 V,respectigatively,at applied voltage of 90 V and 20 Hz.The leakage current density of the capacitor,measured at 40 V,is ~5.37×10-6A/cm2.Further analyses indicated that the Pt/P(VDF-TrFE)/Ni-Al ferroelectric capacitors satisfies the ohmic conduction behavior.Moreover,No obvious fatigue can be found the capacitors up to 109 swithching cycles.
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