SUN Xin-ge, ZHANG Ting, LIU Xiao-na, ZHANG Wei-feng. Resistance switching properties of pulsed laser deposited La0.67Sr0.33MnO3 thin film on F-doped SnO2 conducting glassJ. Journal of Functional Materials and Devices, 2011, 17(5): 481-485.
Citation: SUN Xin-ge, ZHANG Ting, LIU Xiao-na, ZHANG Wei-feng. Resistance switching properties of pulsed laser deposited La0.67Sr0.33MnO3 thin film on F-doped SnO2 conducting glassJ. Journal of Functional Materials and Devices, 2011, 17(5): 481-485.
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Resistance switching properties of pulsed laser deposited La0.67Sr0.33MnO3 thin film on F-doped SnO2 conducting glass

    Abstract
  • The La0.67Sr0.33MnO3（LSMO） thin film was grown by pulsed laser deposition on SnO2: F（FTO） substrates.Resistive switching characteristics of Au/ LSMO/FTO sandwich structure were tested by direct current voltage at room temperature.The results show the bipolar reversible resistive switching was observed.Analysis of I-V behaviors is carried out,and it is suggested that the resistive switching characteristics are governed by the Schottky conduction mechanism and space-charge-limited-current conduction in high resistive state.The switching process between high resistive state and low resistive state is explained in terms of space-charge-limited-current conduction in higher voltage region caused by asymmetric electron trapping centers.
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