An accurate simulation model for cross-shaped CMOS Hall sensors

An accurate behavioral simulation model for cross-shaped CMOS Hall device is presented.This model consists of a 90° symmetry passive network,including four current-controlled Hall voltage sources,twelve non-linear resistors and eight parasitic capacitances.The behavioral model completely takes into accounts the important physics effects,parasitic capacitances and contact resistances.It has been written in Verilog_A language and is very suitable for the simulation of fully integrated solution in the Cadence Spectre environment.The model simulation was performed using AMS 0.8 p,m CMOS technology parameters.The model’ s simulation results have made a good accordance with the experimental results and show a very high accuracy without heavy computation.