ZHANG Shengan, LI Yang, XIA Gongting, DAI Jian, SHI Chengyu. Progress in modifyinglead-free ferroelectric thin film materials by dopingJ. Journal of Functional Materials and Devices, 2015, 21(5): 139-144.
Citation: ZHANG Shengan, LI Yang, XIA Gongting, DAI Jian, SHI Chengyu. Progress in modifyinglead-free ferroelectric thin film materials by dopingJ. Journal of Functional Materials and Devices, 2015, 21(5): 139-144.

Progress in modifyinglead-free ferroelectric thin film materials by doping

  • As a kind of environment-friendly material,the lead-free ferroelectric thin film meets the need of the future development and has limitless prospects. However,its performance needs to be improved. This paper mainly summarizes the research progress of improving ferroelectric performance of the thin film,by doping modification of four systems. Finally,it points out the main problems of this kind of materials as well as the main direction of future research.
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