Total-dose irradiation effect of partially-depleted NMOSFET/SIMOX with two different gate structures

Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.It is found experimentally that back and top gate threshold shifts and drain current is confined to a low level during irradiation.The transistors can work properly under the dose of 2 Mrad（SiO₂）.It is also confirmed that for the back gate of both gate-all-around and H gate,PG is the worst case;for the top gate,ON is the worst case.The saturated net positive charge density N_ot and the fraction of hole capture α in buried oxides are calculated by data fitting.