反转胶lift-Off工艺制备堆栈电感

Fabrication of stacked inductor by inversion photoresist lift-off process

  • 摘要: 本文采用反转胶lift-off工艺,对比分析了金属淀积方式、光刻胶的选择及光刻胶烘干时间对金属剥离效果的影响,制备出最小线宽4μm,最小间距4μm,厚度为1μm,线宽误差小于0.5μm的金属线条,并最终实现具有三层金属的堆栈电感,经光学显微镜和台阶仪观测表明,器件外观良好成品率高。

     

    Abstract: In this paper,the stacked inductors were fabricated with three metal layers by the inversion photoresist lift-off process,and the effect of metal deposition method、photoresist selection and drying time were analyzed,finally,the inductors with the minimum metal line width of 4μm,the minimum space of 4μm and the metal thickness of 1μm were fabricated,The devices have good appearance with high production yield observed by the optical microscope and step profiler.

     

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