TiN(100)/Al(100)界面性质和电子结构的第一性原理计算

First-principles calculations of interfacial properties and electronic structure of the TiN (100)/Al (100) interface

  • 摘要: 本文采用第一性原理方法计算了TiN和Al的电子性质和弹性性能, 分析了TiN(100)/Al(100)界面的粘附功(Wad)、电子结构以及键合特性。计算结果表明, TiN表现出一定的金属特性, 主要由Ti-3d轨道上的电子贡献, 而Al则呈现出显著的导体特性。此外, TiN和Al均具有各向异性, TiN的抗变形能力显著高于Al, 而Al的横向变形能力则强于TiN。本文考虑了Al-on-N联结和Al-on-Ti联结两种界面模型。结果显示, Al-on-N联结界面的粘附功为1267 mJ/m2, 明显高于Al-on-Ti联结界面的粘附功(952 mJ/m2), 表明Al-on-N联结界面的粘附强度更强。其原因在于Al-on-N联结界面的键合机制主要依赖于强Al3sp-N2sp极性共价键的相互作用。本研究结果为解释TiN和Al界面的粘附强度和稳定性提供了理论依据。

     

    Abstract: This study employs first-principles methods to calculate the electronic properties and elastic performance of TiN and Al, and analyzes the work of adhesion (Wad), electronic structure, and bonding characteristics of the TiN(100)/Al(100) interface.The calculations reveal that TiN exhibits certain metallic properties, primarily contributed by electrons in the Ti-3d orbital, while Al displays significant conductive characteristics.Furthermore, both TiN and Al demonstrate anisotropy, with TiN showing significantly higher resistance to deformation compared to Al, while Al exhibits stronger lateral deformation capability than TiN.This study considers two interface models: Al-on-N connection and Al-on-Ti connection.Results indicate that the work of adhesion for the Al-on-N connection interface is 1267 mJ/m2, notably higher than that of the Al-on-Ti connection interface (952 mJ/m2), suggesting stronger adhesion strength in the Al-on-N connection interface.This is attributed to the bonding mechanism of the Al-on-N connection interface, which primarily relies on the interaction of strong Al3sp-N2sp polar covalent bonds.The findings of this study provide a theoretical basis for explaining the adhesion strength and stability of the TiN and Al interface.

     

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