BiSb/楔形铁磁结构中的自旋轨道矩无场切换

Field-free switching of spin-orbit torque in BiSb /wedge ferromagnetic structure

  • 摘要: 本工作通过微磁学模拟数值计算证实了以超低电流密度驱动拓扑绝缘体/楔形铁磁异质结构实现确定性无场切换是可行的。此外, 我们研究了楔形铁磁层尺寸、界面Dzyaloshinskii-Moriya相互作用、类场转矩和倾斜垂直磁各向异性的偏离极角等因素对自旋轨道矩无场切换的影响。综合优化各个因素后, 拓扑绝缘体(BiSb)/楔形铁磁异质结构的临界切换电流密度最低可降至9.0×106 A/cm2, 比传统重金属/铁磁结构的临界切换电流密度降低了1~2个数量级。这项研究对于推动低功耗自旋轨道矩磁性随机存储器的产业化应用具有重要的意义。

     

    Abstract: In this work, the micromagnetic simulation confirms that it is feasible to realize deterministic field-free switching by driving topological insulator/wedge ferromagnetic heterostructure with ultra-low current density.In addition, we studied the effects of wedge-shaped ferromagnetic layer size, interfacial Dzyaloshinskii-Moriya Interaction (DMI), field-like torque and tilted perpendicular magnetic anisotropy off-pole angle on spin-orbit torque field-free switching.Through comprehensive optimization, the minimum critical switching current density of the topological insulator (BiSb)/wedge - shaped ferromagnetic heterostructure can be reduced to 9.0×106 A/cm2, which is 1 ~2 orders of magnitude lower than that of the traditional heavy metal/ferromagnetic structure.This research is of great significance for promoting the industrial application of low-power spin-orbit torque magnetic random-access memory.

     

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