FeCuNbSiB多层膜的磁化特性与巨磁阻抗效应
Magnetization processes and giant magneto-impedance effect in feCuNbSiB multilayered flims
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摘要: 用射频磁控溅射法制备了FeCuNbSiB多层膜,制备态样品的GMI效应在驱动电流频率为12MHz时达到最大,为44.3%。利用复数磁导率和等效电路讨论了该多层膜的磁化过程,及与GMI效应的关系。外加直流磁场抑制磁畴运动,在等效电路中与抵消并联电路相关。样品磁化的特征弛豫频率在12MHz左右,与出现最大磁阻抗变化的频率接近。Abstract: FeCuNbSiB multilayered flims are prepared by radio frequency(RF)sputtering.The as-cast sample has a maximum GMI ratio of 44.3% at 12MHz.Complex permeability and equivalent circuits are used to demonstrate the magnetization processes,which are relevant to GMI effect.DC applied field is to produce a damping in domain wall movements,which is responsible for the minus parallel RL arm in equivalent cirCuits.The relaxation frequency of the sample is about 12MHz,near which the maximum GMI happens.
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