倾斜磁控溅射制备低阻高透ITO薄膜及其光电特性

Preparation and characteristics of ITO thin films with high transmittance and low resistance by tilt magnetron sputtering

摘要: 利用直流磁控溅射方法,在Ar和O₂的混合气氛中,采用陶瓷靶制备ITO薄膜;采用紫外-可见-红外分光光度计和四探针法研究了溅射工艺参数对ITO薄膜的光电特性的影响。实验结果表明,当靶材角度在23-25°、O₂流量在7-9sccm、溅射时间在60-90 min和溅射功率在100-120W时获得可见光透过率高于90%,方阻在10-20Ω/□之间的优质ITO薄膜。

Abstract: Using magnetron sputtering method,ITO thin films were successfully deposited on glass with target at a mixed atmosphere of Ar and O₂.The effect of sputtering process parameters on electro-optical characteristics of ITO thin films was discussed using UV-visible-infrared spectrophotometer and four-probe.The experimental results show that when the target angle is 23～25 degrees,the oxygen flow rate is 7～9sccm,sputtering time is 60～90 min and the sputtering power is 100～120W,transmittance of ITO thin films is more than 90%,and sheet resistance ranges from 10～20Ω/□.