氧化铝陶瓷衬底上金刚石100织构生长的氦增强刻蚀

Helium enhanced post-growth etching of 100-textured diamond films on alumina substrates

  • 摘要: 用微波等离子体化学气相沉积法(MPCVD)在氧化铝陶瓷衬底上成功地制备出具有100织构的金刚石薄膜,并对该薄膜进行了X射线衍射(XRD)、扫描电子显微镜(SEM)和Raman光谱分析。由于氦原子具有高的电离能,因此本工作在反应气氛中引入了少量的氦,以提高氢等离子体的刻蚀效率。实验结果表明,少量氦气的引入促进了等离子体对非(100)面的选择性刻蚀,从而也有利于金刚石薄膜的100织构生长。

     

    Abstract: 100-textured diamond films were deposited on alumina ceramic substrates by microwave plasma chemical vapor deposition (MPCVD). The effects of the deposition condition on texture were also investigated based on the results of scanning electron microscopies (SEM), X-ray diffraction spectra (XRD) and Raman scattering spectra. Because of its higher ionization energy, a small portion of helium was introduced into the general post-growth etching process to improve the etching efficiency. According to the results from the etching experiments performed on 100 and 111-textured diamond films respectively, the selective etching of non-100-oriented grains by hydrogen plasma with helium addition is observed and it could be used to shorten the etching time and improve the 1O0 texture of the diamond films.

     

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