Abstract: Carbon ions were implanted into p-Si （100） substrates by ion beam synthesis method with doses of 8.0×10¹⁷cm^-2 and 9.0×10¹⁷cm^-2 at about 700℃, followed by high temperature annealingat 1250℃for 5h in Ar. Composition and structure of the SiC buried layer were characterized by infrared reflective spectroscopy （IRRS）, Rutherford backscattering （RBS） and high-resolution transmission electron microscopy （HRTEM）. The results all prove the formation of good crystalline SiC buried layerand an epitaxial alignment with silicon substrates.