晶圆级集成技术研究进展

Research progress of wafer-level integration technology

  • 摘要: 随着物联网时代的来临, 传统的传感器芯片与存算芯片相分离的架构已难以满足实际场景的需求。3D集成技术能够缩短传感器芯片与存算芯片间的物理距离, 实现功能扩展, 提升系统能效。晶圆级集成由于对准精度高和互连密度大, 一直是学界和产业界的研究热点。文章对晶圆级集成技术中的两种主流工艺, 包括硅通孔和混合键合工艺, 进行了系统性介绍; 并结合国内外多个研究机构的最新进展, 对其发展方向进行了展望, 以实现适用于感存算一体化芯片的晶圆级集成工艺。

     

    Abstract: With the advent of the Internet of Things era, the traditional sensor chip and memory chip separation architecture can no longer meet the needs of practical scenarios.3D integration technology can shorten the physical distance between the sensor chip and the memory chip, realize the function expansion, and improve the energy efficiency of the system.Wafer-level integration has always been a research hotspot in academia and industry due to its high alignment accuracy and high interconnection density.This paper systematically introduces two mainstream processes in wafer-level integration technology, including through-silicon via and hybrid bonding processes.Combined with the latest progress of many research institutions at home and abroad, its development direction is prospected to realize the wafer-level integration process suitable for sensing-memory-computing integrated chips.

     

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