Abstract: In this paper, the photogenerated current density and absorbance of silicon heterojunction(SHJ) solar cells with different wafer thickness from 50 μm to 200 μm were simulated by PV Light-house. It is found that the limitation of photogenerated current of flexible SHJ solar cells is caused by decreased substrate absorbance. Thus, the anti-reflection (AR) structures including TCO/MgF₂ and TCO/SiO₂ with different film thickness were simulated to obtain the best photogenerated current density. In experimental methods, MgF₂ thin film was prepared by thermal evaporation and SiO₂ thin film was deposited by RF magnetron sputtering. The MgF₂/SiO₂AR structure with high transmittance (92.56%) was fabricated, which can reduce the reflectance of the SHJ substrate from 6.70% to 5.46%. In addition, the MgF₂/SiO₂ AR structure was applied on the rear side of SHJ solar cell and single MgF₂ or SiO₂ film for front side. The short circuit current density (J_SC) when illumination from rear side improved obviously above 1.10 mA/cm² due to the rear EQE was significantly increased by 2.35%. Moreover, the bifaciality of SHJ solar cell has been achieved 95.16% in this work, which is of great importance to enhance power generation of glass-glass photovoltaic modules.