水平HVPE反应器中气流动力学模拟与GaN生长

Simulation of gas flow in horizontal HVPE reactor and GaN growth

    摘要
  • 摘要: 建立了GaN HVPE系统的流体动力学模型,研究了反应气体在反应室内的浓度场,讨论了反应室内GaCl和NH3管道空间配置对气体在衬底表面浓度分布的影响,并对HVPE系统反应室的设计进行了优化。材料生长结果表明,厚度均匀性良好,直接在蓝宝石衬底上生长的GaN外延层摇摆曲线半宽为 660 arcsec。

     

    Abstract: Model of fluid dynamic for GaN HVPE system was setup, gas concentration in the reactor was simulated. Effect of GaCl and NH3 tube configuration inside the reactor on the gas concentration was discussed. Reactor configuration is optimized based on the simulation results. GaN epilayer is grown with good uniformity in thickness, the FWHM of rocking curve is 660arcsec.

     

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