CMOS兼容的微机械P/N多晶硅热电堆红外探测器

CMOS compatible MEMS P/N polycrystalline silicon thermopile IR detector

摘要: 提出一种采用正面开口进行湿法腐蚀释放热电堆的结构,通过利用高精度光刻、LPCVD(low-pressure chemical vapor deposition)薄膜生长、IBE(ion beam etching)干法刻蚀、TMAH((CH₃)₄NOH)腐蚀等微机械加工技术,设计并制作了CMOS兼容的微机械多晶硅热电堆红外探测器。实验得到的器件成品率达到90%以上,响应率为12.5V/W,探测率1×10⁷cmHz^1/2/W,为进一步大规模红外面阵研究奠定了基础。

Abstract: A structure with specific front cut windows for frontetched releasing was designed.Based on technology such as high precision mask,LPCVD（low-pressure chemical vapor deposition）,IBE（ion beam etching） dry etching,TMAH wet etching,a CMOS compatible MEMS polycrystalline silicon thermopile IR detector is designed and fabricated.The experimental thermopile chip yield a product rate of 90%,and it has a measured responsivity of 12.5 V/W and a detectivity of 1×10⁷cmHz^1/2/W.It paves a way for researches of large scale IR array.