不同沉积工艺下Au/P-CdZnTe接触界面的研究

Study on Au-CdZnTe contact interface deposited by different process

  • 摘要: 采用超声波扫描(SAM)、俄歇电子能谱分析技术(AES)、电极粘附力测试和I-V特性测试等方法研究了化学沉积、溅射和真空蒸发三种不同沉积工艺条件下Au/p-CdZnTe接触界面的各种特性。通过实验结果可以看出,化学法沉积的Au电极能形成较好的欧姆接触特性,但其操作工艺不容易控制,电极接触层均匀性较差,在器件使用过程中,容易引起电极的退化;溅射沉积的Au电极有着较好的附着力,但对CdZnTe表面的损伤较大,欧姆接触特性较差;真空蒸发法沉积的Au电极,有着较好的欧姆接触特性,且其电极接触层也较为均匀,只是电极附着力相对较小,但可以通过合适的退火工艺进行改善。

     

    Abstract: Au contacts were deposited on p-CdZnTe by different process,including electroless deposition,sputtering deposition and thermal vacuum deposition.The characteristics of the interfacial layers between the Au and p-CdZnTe were investigated by shear-off-test,scanning acoustic microscopy(SAM) test,AES test and Current-voltage test,respectively.The results show that the electroless deposition contact can form better ohmic contact,but it is hard to control the operation,so obvious discontinuities appears in the contact interface which can easily cause the degradation of the contact;the sputtering deposition contact is of higher adhesion strength with poorer ohmic-characteristic;the thermal vacuum deposition can get better interface continuities and form better ohmic contact,but adhesion strength is lower,which can be improved by annealing.

     

/

返回文章
返回