氮化碳薄膜的电化学沉积及其电阻率研究
Study on electrodeposition and resistivity of carbon nitride thin films
-
摘要: 在ITO导电玻璃基底上,采用二氰二胺分散在DMF(N,N-二甲基甲酰胺)中形成的溶液做沉积液,阴极电化学沉积了CNx薄膜。X射线光电子能谱(XPS)和傅立叶转换红外光谱(FTIR)的分析结果表明,沉积的CNx薄膜的N/C比为0.7左右,碳和氮主要以C-N、C=N的形式成键,有少量的碳和氮以C≡N的形式成键。拉曼光谱测试发现其存在多个吸收峰,对其进行分析的结果表明薄膜样品中含有α-C3N4和β-C3N4相的成分。电阻率测试表明,氮化碳薄膜的电阻率值达到1012~1013Ω·cm。Abstract: Carbon nitride films were deposite donto glass substrates coated with indium tin oxide(ITO)by cathode electrodeposition from solution of dicyandiamide in N,N-dim ethylformamide.The results of X-ray photoelectron spectroscop y(XPS) and Fourier transform infrared spec troscopy(FTIR)show that the nitrogen to carbon(N/C)ratio of samples is 0.70or so,nitrogen is mostly bonded with carbon by C-N,C=N.A lot of peaks appeared in Raman spectroscopy support the exis tence of α-C3N4 and β-C3 N4 mixture in the films.The resistivity of carbon nitride films is 1012 Ω·cm to 1013 Ω·cm.
下载: