AlN薄膜体声波谐振器研究

Design of film bulk acoustic wave resonator

  • 摘要: 采用一维Mason模型,研究了体声波谐振器的频率特性,探讨了压电薄膜A lN和上电极膜厚对谐振频率的影响,压电参数d33及压电薄膜与电极的厚度比率对机电耦合系数的影响,同时研究了谐振区域的面积和声能在衬底中的损耗对品质因数的影响。测量的体声波谐振器频率特性曲线与模拟结果吻合的较好。

     

    Abstract: One dimensional Mason model is adopted to investigate the frequency response character of a film bulk acoustic wave resonator.The influences of electrode and AlN films thicknesses on the resonant frequency,piezoelectric constant d33 and electrode to AlN thickness ratio on the effective resonator coupling coefficient are discussed.The relationship between the quality factor and resonant area and energy loss in the substrate are also studied.Frequency response character of BAW fits well with the simulation result.

     

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