Abstract: In this paper, the effects of dopant ratio on the resistivity and optical transmittance of ZnO:Al films deposited by pulsed laser deposition have been investigated. The properties of the films have been analysed through Hall effect and X-ray diffraction. From electrical and optical analysis the carrier concentration ,optical transmittance and optical energy gap increased when the dopant ratio is raised from 0.75%to 1.5%. The film prepared at 300℃ using a target of dopant ratio of 1.5%has a minimum resistivity of 7.1×10 ^-4 Ωcm,and a transmittance of about 90%in the range of visible light.