Abstract: A novel contact planarization（CP） technology was utilized to planarize sacrificial photoresist for MEMS application.The relationship between temperature and photoresist's viscosity was investigated and influences of sacrificial layer thickness,applied pressure,temperature and feature density to planarization were discussed.Under the optimal condition,the step heights decrease from 2um to 20-40nm.Compared with chemical mechanical polishing（CMP）, CP result shows good local and global uniformity and no obvious dishing effect and scratches exist.