用离子注入的方法实现InGaAs/InGaAsP激光器材料的量子阱混合

Quantum well intermixing of InGaAs/InGaAsP laser-structure using ion implantation

摘要: 为了在光开关器件的局部区域实现量子阱混合，选用1～2MeV、1×10¹³～5×10¹³cm^-2的P⁺离子注入到InGaAs/InGaAsP分别限制多量子阱（SCH-MQW）激光器结构，在700℃下快速热退火90s。发现光致发光谱的峰值位置发生蓝移9～89nm。蓝移的大小随着注入能量和剂量的增大而增大，并且能量比剂量对蓝移的影响更大。

Abstract: In this paper, a very successful technique that uses phosphorus ion implantation to enhance the interdiffusion of QW in InP based laser structure was described. Room-temperature photoluminescence (PL) spectra was obtained on the samples. PL emission peaks of the samples varies with dose and energy of implantation. PL spestra are blue-shifted in wavelength from 9nm to 89nm.