GaAs HBT直接耦合微波单片集成电路

Design and performance of GaAs HBTs monolithic microwave amplifier

摘要: 叙述了基于GaAs HBT的直接耦合级联形式,设计制造的几种微波单片集成电路，包括2.5Gb/s跨阻放大器、3GHz可级联放大器和10Gb/s跨阻放大器的设计、制造和测试结果。

Abstract: The design, fabrication and performance of direct coupled AlGaAs HBTs monolithic microwave amplifiers were described, which involved 3GHz cascadable amplifier, 2.5Gb/s and 10Gb/s transimpedance amplifier.