Abstract: The Bi₂Ti₂O₇ thin film with strong (111) orientation was successfully prepared by chemical solution deposition (CSD) technique on n-Si (100) using bismuth nitrate and titanium butoxide as starting materials.The film was crack free and dense with smooth surface. The film presents very good insulating property and has relatively high dielectric constant. Its application in insulation gate field effect transistor can greatly increase the transconductance and lower the cut-in voltage of metal-oxide semiconductor field effect transistor.