Abstract: The characteristic of pulsed anodic oxidation process was investigated in this paper.Broad area semiconductor lasers with wavelength of 776nm were fabricated with pulsed anodic oxidation process.The threshold current of the device was 0.35A with the slope efficiency of 1.12W/A,compared to the devices fabricated with conventional fabrication process,the threshold current of the devices reduced by 22% and the slope efficiency increased by 18%.