Abstract: The molecular-beam epitaxy growth conditions of self-assembled InAs/GaAs quantum dots（QDs） have been optimized to achieve a low density of dots emitting at 1300nm at room temperature.An ultralow InAs growth rate 0.001ML（monolayer）/s is used to reduce the density to 4×10⁶cm^-2. With these results,InAs/GaAs QDs appear as a very promising system for future applications of single photon sources in fiber-based quantum crytography and quantum communications.