一种MEMS压控电容设计及其相位噪声分析

Design of a MEMS varactor and Analysis of its Phase Noise

  • 摘要: 给出了一种MEMS压控电容的设计和相位噪声分析结果。在电容器结构中引入衬底金属层以达到控制寄生电容的目的;使用HFSS进行了上极板开孔对电容的影响的仿真,得到了不影响电容值的最佳尺寸是5微米。在恒寄生电容的假设下分析了MEMS压控电容的相位噪声,在SPICE模型基础上使用HSPICE进行了相位噪声仿真,分析发现布朗运动所产生的相位噪声的典型值是-176dBc/Hz,环境声波造成的相位噪声的典型值是-137dBc/Hz。

     

    Abstract: Design and phase noise analysis of a MEMS varactor is presented.Metal layer on the substrate is used to control the parasitic capacitance in the configuration.The effect of etch hole on the up-capacitor electrode is simulated using HFSS,and the best size which will not effect the capacitance is found to be 5μm.On the assumption of the constant parasitic capacitance,the phase noise of MEMS varactor is analysed.Based on a SPICE model,simulations of phase noise have been performed using HSPICE.It’s found that the typical phase noise due to Brownian motion is-176dBc/Hz,and acoustic noise is-137dBc/Hz.

     

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