曲折状FeSiB/Cu/FeSiB三层膜结构应力阻抗效应研究

Stress-impedance effects of FeSiB/Cu/FeSiB trilayers with a meander structure

  • 摘要: 采用磁控溅射法在玻璃基底上制备了曲折状FeSiB/Cu/FeSiB三层膜结构,在1~40MHz范围内研究了FeSiB膜和Cu膜厚度对三层膜结构应力阻抗效应的影响。结果表明:高频下三层膜的应力阻抗效应随着其形变的增加近似线性增加,在自由端弯曲变形1mm、外加电场频率为25MHz时,应力阻抗效应达到-18.3%,在力敏传感器方面具有广阔的应用前景。

     

    Abstract: FeSiB/Cu/FeSiB trilayers with a meander structure were fabricated by magnetron sputtering on thin glass substrate, and the stress-impedance(SI) effects were studied in the frequency range of 1-40MHz for different film thicknesses of FeSiB films and Cu layer. Experimental results show that the values of stress-impedance(SI) ratio increase nearly linearly with the deflection of the FeSiB/Cu/FeSiB trilayers at high frequencies, and a large negative SI ratio of-18.3% is obtained at 25MHz with 1mm deflection in the FeSiB/Cu/FeSiB trilayers with a thicker FeSiB film. It′s attractive for the applications in stress sensors.

     

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