Abstract: ZnO:Al（ZAO）thin film was prepared by DC reactive magnetron sputtering.Sputtering power and Target-Substrate Distance（TSD） is the key process parameters.In this paper,the influences of sputtering power and TSD on resistivity,transparency and microstructure were investigated.The optimal prepared parameters about sputtering power,TSD was obtained.The high performance ZAO film with resistivity of 4.5×10^-4Ω·cm and average optical transmittance over 80%within visible light,was successfully achieved using the optimal parameters.The optical and electric properties are to meet the application requirements.