退火温度对Bi0.5Sb1.5Te3薄膜的微结构及热电性能的影响
Influence of annealing treatment on microstructure and thermoelectric properties of Bi0.5Sb1.5Te3 thin films
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摘要: 采用瞬间蒸发技术沉积了厚度为800 nm的P型Bi0.5Sb1.5Te3热电薄膜,并在373 K-573 K进行1小时的真空退火处理。利用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)和能量散射谱(EDS)分别对薄膜的物相结构、表面形貌以及化学计量比进行表征。研究了退火温度对Bi0.5Sb1.5Te3薄膜的电阻率和Seebeck系数的影响,退火温度从373K增加到473K,Bi0.5Sb1.5Te3薄膜的电阻率和Seebeck系数都随之增加,退火温度从523K增加到573K,薄膜的电阻率和Seebeck系数缓慢下降。当退火温度为473K时,Bi0.5Sb1.5Te3薄膜的电阻率和Seebeck系数分别为2.1 mΩcm和162μV/K,薄膜的热电功率因子最大值为13μW/cmK2。Abstract: P-Bi0.5Sb1.5Te3 thermoelectric thin films were deposited by flash evaporation method with thickness of 800 nm.The thin films were annealed in 373 K-573 K for one hour.Phase structure,surface morphology and stoichiometric ratio of the thin films were characterized via X-ray diffraction（XRD）,field emission scanning electron microscope（FESEM） and energy dispersive spectroscopy（EDS）.Influence of annealing treatment on electrical resistivity and Seebeck coefficient were investigated.Electrical resistivity and Seebeck coefficient increase with annealing temperature increasing from 373 K to 473 K,and electrical resistivity and Seebeck coefficient decrease with annealing temperature increasing from 523 K to 573 K.Electrical resistivity and Seebeck coefficient are 2.1 mΩcm and 162 μV/K,respectively when the thin films are annealed at 473 K for 1 h..The maximum thermoelectric power factor is 13 μW/cmK2.
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