SiC上Ti/Ni/Au多层金属的欧姆接触特性

Ohmic contact property of Ti/Ni/Au on n-type 4H-SiC

    摘要
  • 摘要: 采用Ti/N i/Au多层金属在高掺杂n型4H-SiC外延层上制作了欧姆接触测试图形,通过传输线法(Transm ission LineMethod,TLM)测量得到的最小比接触电阻为1.4×10-5Ω.cm2,经500℃N2老化后接触电阻大约有一个数量级的增加并保持稳定。

     

    Abstract: Ohmic contacts were prepared by using Ti/Ni/Au multi-layer metal on n-type 4H-SiC epi-layer highly doped by N+ ion implantation.Specific contact resistivities（ec） were measured by transmission line method（TLM） and a lowest ec of 1.4×10-5Ω·cm2 is obtained.The contact resistivities increase at the beginning of the 500℃ annealing,and do not vary much after 12 h annealing.

     

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