结构助剂对高比表面碳化硅结构的影响
Influences of Pore-Adjusting Agent on the Structureof High Surface Area Silicon Carbide
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摘要: 以糠醇为碳源,正硅酸乙酯为硅源,硝酸钴为催化剂,含氢硅油为结构助剂,通过溶胶凝胶和碳热还原的方法制备出高比表面积多孔碳化硅,采用XRD、SEM、TEM、HRTEM和低温氮吸附-脱附对所制备的样品进行表征。结果表明,添加了结构助剂得到的碳化硅的比表面积可达125-167m2.g-1,其用量对碳化硅的比表面积和孔容有重要的影响,含氢硅油自组装成螺旋结构是制备高比表面积碳化硅的原因所在。Abstract: High surface area silicon carbide was prepared by the sol-gel and carbothermal reduction method,in which furfuryl alcohol and tetraethoxysilane（TEOS） were respectively employed as carbon and silica precursors,cobalt nitrate as catalyst and polymethylhydrosiloxane（PMHS） as pore-adjusting agent.XRD、SEM、TEM、HRTEM and low temperature adsorption-desorption were used to characterize the SiC samples.The results show that the surface area of SiC derived from samples added with PMHS varied from 125 to 167 m2.g-1,and the amount of the PMHS has important influences on the surface area and pore volume of the SiC products.The PMHS can assemble themselves into helices is the key reason to obtain high surface area silicon carbide
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