GaAs多量子阱的光电流谱

Photocurrent spectrum of GaAs multiquantum well

  • 摘要: 在T=77K,测量了GaAs多量子阱的光电流,发现在ν=1312cm-1附近存在一个强电流峰,并且在这强电流峰附近的高波数区还有几个弱峰,强电流峰是量子阱中基态电子向第一激发态跃迁形成的,而弱峰与量子阱势垒以上的电子干涉有关。

     

    Abstract: The photocurrent of GaAs/AlGaAs multiquantum well was measured at T=77K. A strong photocurrent peak at ν=1312cm-1 and several weak peaks near the strong peak was observed. These strong photocurrent peak and several weak peaks can be attributed to the transition of electron from ground state of quantum well to first excited state and to weak interference non-localized state, respectively.

     

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