Abstract: I-V characteristics for Ti/4H-SiC Schottky barrier diodes were measured and theore-tically calculated from 300K to 528K, based on the influence of the specific resistance R_on on forward I~V and the influence of the components for reverse current density on reverse I~V at high temperature. The idea factors, Schottky barrier heights and specific resistances are obtained for different temperatures. Comparison of theoretical results with experimental data indicates that thermionic emission under forward bias and tunneling effect under reverse bias are dominated respectively. But when temperature rises, the reverse thermionic emission current and the current gen erated in the depletion region will increase rapidly that they have to be taken into account.