Abstract: In recent decades,due to the development of photoelectric information technology,ultraviolet short wave photoelectric devices have become the focus of research. Zinc Oxide（ZnO） is a II-VI compound,with wide band gap, high exciton binding energy advantages, innocuity, low cost, strong resistance to radiation, is considered to be a new generation of semiconductor photoelectric materials,has a wide application prospect,has become the hotspot of study recently. Doping elements are effective ways to change their intrinsic properties and improve their application performance. In this paper, by using the first principle based on the density functional theory, band structure, density of States and optical properties of Eu doped ZnO structure were calculated by the CASTEP module, and the pure system are analyzed.