Abstract: To obtain novel SOI (Silicon On Insulator)with buried CeO₂,the electron evaporated depo-sition and the post annealing were used.And high orientated(111),(311)CeO₂ film was obtained.The film provides the substrate for the following silicon epitaxy.The me chanism of high orientation induced by the post annealing is disc ussed.The(111),(311)crystal planes are the close-packed and next-close-packed crystal plan e respectively,they only need the lo west energy to conquer the energy barrier when the CeO₂ thin film is crystallized.Thus the annealing induces the formation of(111),(311)CeO₂ thin film.