HEMT小信号等效电路参数提取

PARAMETERS EXTRACTION FOR HEMT SMALL-SIGNAL EQUIVALENT-CIRCUIT

摘要: 本文用HEMT小信号等效电路模型 ,考虑到HEMT与MESFET结构上的不同点 ,具体分析了HEMT小信号等效电路中串联电阻、寄生电感、寄生电容和本征元件参数的提取方法。采用这些方法 ,提取了HEMT器件32 - 39 GHz八个频率点的S参数值。实验结果表明 ,该方法简单有效 ,具有可操作性。

Abstract: A HEMT small-signal equivalent-circuit model is introduced in this paper. Considering the difference between HEMT and MESFET, a method of extracting series-resistance, parasitic inductance, parasitic capacitance and intrinsic element parameters for HEMT small-signal equivalent-circuit is described. Using these methods, the S parameter for HEMT in 32-39GHz range is extracted. Experimental results indicate that this method is simple and feasible.