Abstract: The opto-electronic properties of molecular beam epitaxy (MBE) technique grown by ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated. Ultraviolet (UV) photo-responsivity as high as 0.01 A/W and three orders of visible rejection power are demonstrated at room temperature. The results of d.c. resistivity measurements reveal that the dark resistivity of the ZnSSe thin films decreases as the crystal size increases and reaches a value of 4.3 × 10¹¹ Ω·cm for a thin film grown at the optimised substrate temperature, 290℃. The results of a.c. impedance measurements performed in the frequency range of 4oHz to 4000 Hz furthe indicate that the impedance of this alloy thin film can provide a good matching with the liquid crystal layer of a liquid crystal light valve(LCLV) for UV imaging applications.