Abstract: The amorphous silicon thin films have been deposited on K8 glass substrates by electron beam vapor deposition and high doping p-type silicon as an evaporating source.The p-type polycrystalline silicon（poly-Si） thin films have been fabricated by nickel-induced crystallization in nitrogen atmosphere.The effects of different annealing temperatures on photoelectric properties of p-type poly-Si thin films were investigated.The p-type poly-Si thin films were characterized by Hall,Raman,AFM and ultraviolet-visible absorption spectrometry.The results indicate that with the increase of annealing temperature,the crystallization becomes better at first and worse afterwards.The square resistance of 30 nm thick p-type poly-Si thin films is 300 Ω/□ under the optimization of annealing temperature and the optical transmission is over 10 % in the visible light region.