Abstract: CuInS₂（CIS） films were prepared by sulfurization of the electrodepositing Cu-In precursors in sulfur atmosphere.The crystal structure,surface morphologies and compositions of the CuInS₂ films were characterized by X-ray diffraction（XRD）,atomic force microscopy（AFM） and energy dispersive spectroscopy（EDS） respectively.The results revealed that the metallic CuxS phase always presented on top of the CIS films in the range of 500~560℃ sulfurization temperatures,which could be removed by KCN etching.The high quality CIS films with the preferred orientation obtained for the sulfurization at 540℃ are favorable for CuInS₂ absorbers in solar cells.