Abstract: In this paper,the four fields of strain silicon are analyzed according to the development of key CMOS technology.The result is obtained that the strain technology has been a crucial one for the micro-electronics from the subjective and impersonal aspects.Several methods of strained quantity,Raman Spectra Frequency Shift,Convergent beam electron diffraction,Four Points Strain Test and ANASYS Simulation,are introduced to offer valuable reference for applying strain silicon in the CMOS technology.