Abstract: A series of n-type silicon thin films and microcrystalline silicon solar cells were prepared by plasma enhanced chemical vapor deposition（PECVD）.The influence of n-layers on electrical properties of microcrystalline silicon solar cells was investigated.It is found that the open-voltage changes linearly with the saline concentration of n-layer,and the short-circuit current has a best value,which is caused by the incubation layer and microstructure evolution in the intrinsic layer.With the optimized n-layer,amorphous silicon/microcrystalline silicon tandem solar cells on stainless steel flexible substrates with conversion efficiency of 9.28%（AM0,1353W/m²） and 11.26%（AM1.5,1000W/m²）were obtained.