喷雾热分解法制备SnO<sub>2</sub>·F薄膜与导电性能研究

喷雾热分解法制备SnO₂·F薄膜与导电性能研究

摘要: 以SnCl₄·5H₂O和NCH₄F为原料,采用喷雾热分解的方法在片状日用玻璃基材和石英玻璃基材上制得了掺氟氧化锡透明导电薄膜。采用X射线衍射仪(XRD)和扫描电镜(SEM)分别对薄膜的内部结构和表面形貌进行了表征。研究了F^-的掺杂量、喷涂温度、沉积时间和热处理对薄膜方阻R□的影响。实验结果表明,当NCH₄F/SnCl₄·5H₂O=32wt%、成膜温度为450℃、喷涂时间为15s时,可使所得薄膜的方阻R□达最低,为10Ω/□。

Abstract: By using SnCl4· 5H₂O and NH₄F as raw materials,the Fluorine-doped SnO₂ thin films were prepared on the soda-lime glass and quartz glass flat substrates by spray pyrolysis process. The crystal structure and surface morphology of the thin films were characterized by using XRD and SEM. The effects of F^- contents,deposition temperature,deposition time and annealing treatment on the sheet ressitance of the thin films were investigated.The results show that the R□ of the F^- doped SnO₂ thin films can reach to 10Ω/□, when NH₄F/SnCl₄· 5H₂O in the initial is solution 32wt% and deposited for 15s at 450℃.