Abstract: Amorphous zinc-doped indium oxide（a-IZO） thin films have been deposited on glass substrates by DC reactive magnetron sputtering at room temperature.The resistivity of the thin films can be adjusted from 10^-3 to 106 Ω·cm through the proper control of the oxygen pressure during the deposition process.For the films deposited at oxygen pressure of 5×10^-2 Pa,the average transmission in the visible region is more than 85%.Oxide thin film transistors（Oxide-TFTs） were fabricated using as-deposited a-IZO as channel layer.The top-gate-type Oxide-TFTs operate in n-type enhancement mode with a field-effect mobility of 4.25 cm²V^-1s^-1,an on-off current ratio of 10³.The primary results reveal that a-IZO has potential application in oxide-TFTs for flat panel display such as TFT-LCD and TFT-OLED.