Abstract: The anatase TiO₂ thin films were coated on FTO conductive glass by spin coating technique,and a resistive switching memory with Al/TiO₂/FTO structure was constructed. The surface morphology,phase composition and crystal structure of TiO₂ thin films and the properties of Al/TiO₂/FTO devices were studied by AFM,XRD,Raman spectroscopy and I-V measurements. Al/TiO₂/FTO devices exhibit bipolar resistive switching characteristics without electroforming process. In addition,by comparing with W （probe）/TiO₂/FTO devices without Al electrodes,the resistive switching process and various current transfer mechanisms controlled by Al/titanium dioxide interface effect are obtained. The results show that the positive bias region Al/TiO₂/FTO devices is Pool-Frenkel conduction mechanism,the negative bias region is ohmic conduction mechanism in the low resistance state,and the trap-controlled space chargelimited current conduction mechanism is satisfied in the high resistance state.