不同缓冲层对Al掺杂ZnO薄膜性能的影响

Effect of Different Buffer Layers on the Properties of Al-doped ZnO Films

摘要: 本文采用射频反应磁控溅射法在玻璃基底上分别以Al₂O₃和AZO为缓冲层制备ZnO:Al(AZO)薄膜,利用X射线衍射仪(XRD)、扫描电镜(SEM)、紫外-可见分光光度计等方法对薄膜的结构和光电性能进行表征。XRD和SEM的分析结果表明,在Al₂O₃和AZO缓冲层上生长的AZO薄膜均具有较好的C轴择优取向,薄膜表面光滑平整,薄膜的结晶质量得到改善;透射光谱表明所有样品在可见光范围内的透过率均超过80%;薄膜的导电性能得到提高。

Abstract: AZO films with Al₂O₃ and AZO buffer layers were deposited by RF magnetron sputtering.The structure and Optoelectronic properties of AZO films were analyzed by X-ray diffraction（XRD）,scanning electron microscopy（SEM）,UV-VIS spectrophotometer.The results show that Al₂O₃ and AZO buffer layers with better c-axis preferred orientation,smooth surface,and the crystal quality has been improved;The transmittance in ultraviolet-visible region is higher than 80%;The conductivity of the film is also improved.