Abstract: Because antimonide-based compound semiconductors have excellent material performances such as high electron mobility and high electron saturation velocity,they have great potential and development space in the manufacture of the new generation of ultra-high speed,ultra-low power microelectronic devices and integrated circuits.Research progresses in device structures,device performances and applications of antimonide-based HEMTs are introduced and the existing problems of antimonide-based HEMTs and their vast potential for future development are also pointed out.